IPW65R110CFDFKSA2 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
| Кількість | Ціна |
|---|---|
| 1+ | 429.77 грн |
| 30+ | 236.32 грн |
| 120+ | 197.30 грн |
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Технічний опис IPW65R110CFDFKSA2 Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V, Power Dissipation (Max): 277.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.3mA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V.
Інші пропозиції IPW65R110CFDFKSA2 за ціною від 312.21 грн до 412.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||
|---|---|---|---|---|---|---|---|---|---|
| IPW65R110CFDFKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 31.2A; 277.8W; TO247-3 Case: TO247-3 Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 118nC On-state resistance: 0.11Ω Drain current: 31.2A Power dissipation: 277.8W Drain-source voltage: 700V |
на замовлення 28 шт: термін постачання 14-30 дні (днів) |
|
| IPW65R110CFDFKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 31.2A; 277.8W; TO247-3
Case: TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 0.11Ω
Drain current: 31.2A
Power dissipation: 277.8W
Drain-source voltage: 700V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 31.2A; 277.8W; TO247-3
Case: TO247-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 0.11Ω
Drain current: 31.2A
Power dissipation: 277.8W
Drain-source voltage: 700V
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 412.98 грн |
| 10+ | 312.21 грн |