IPW65R125C7XKSA1

IPW65R125C7XKSA1 Infineon Technologies


Infineon-IPW65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd01420df7147364a5 Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
на замовлення 80 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+396.48 грн
10+ 320.59 грн
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Технічний опис IPW65R125C7XKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 18A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V, Power Dissipation (Max): 101W (Tc), Vgs(th) (Max) @ Id: 4V @ 440µA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V.

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IPW65R125C7XKSA1 IPW65R125C7XKSA1 Виробник : Infineon Technologies 3617ds_ipw65r125c7_2_0.pdffolderiddb3a3043156fd5730115c736bcc70ff2fil.pdf Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IPW65R125C7XKSA1 IPW65R125C7XKSA1 Виробник : INFINEON TECHNOLOGIES IPW65R125C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPW65R125C7XKSA1 IPW65R125C7XKSA1 Виробник : Infineon Technologies Infineon_IPW65R125C7_DS_v02_00_en-1732083.pdf MOSFET HIGH POWER_NEW
товар відсутній
IPW65R125C7XKSA1 IPW65R125C7XKSA1 Виробник : INFINEON TECHNOLOGIES IPW65R125C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній