Технічний опис IPW65R190CFDFKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 730µA, Supplier Device Package: PG-TO247-3-1, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V.
Інші пропозиції IPW65R190CFDFKSA1
| Фото | Назва | Виробник | Інформація |
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IPW65R190CFDFKSA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3 Mounting: THT Kind of package: tube Case: PG-TO247-3 On-state resistance: 0.19Ω Power dissipation: 151W Polarisation: unipolar Technology: CoolMOS™ Drain current: 17.5A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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IPW65R190CFDFKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 730µA Supplier Device Package: PG-TO247-3-1 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
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IPW65R190CFDFKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3 Mounting: THT Kind of package: tube Case: PG-TO247-3 On-state resistance: 0.19Ω Power dissipation: 151W Polarisation: unipolar Technology: CoolMOS™ Drain current: 17.5A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товар відсутній |