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IPW65R190CFDFKSA2 Infineon Technologies

Name: IPW65R190CFDFKSA2
Brand: Infineon Technologies
SKU: 19997982-3
Price: 169.87 UAH
Availability: InStock

Infineon-IPX65R190CFD-DS-v02_07-en.pdf?fileId=db3a30432fd0c54a012fded065a8309b

Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V

на замовлення 278 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
2+	259.26 грн
30+	198.2 грн
120+	169.87 грн

Мінімальне замовлення: 2

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Технічний опис IPW65R190CFDFKSA2 Infineon Technologies

Description: MOSFET N-CH 650V 17.5A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 700µA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V.