Технічний опис IPW80R280P7XKSA1 Infineon Technologies
Description: INFINEON - IPW80R280P7XKSA1 - Leistungs-MOSFET, n-Kanal, 800 V, 17 A, 0.24 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 800V, rohsCompliant: YES, Dauer-Drainstrom Id: 17A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 101W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: CoolMOS P7, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.24ohm.
Інші пропозиції IPW80R280P7XKSA1 за ціною від 122.89 грн до 305.89 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPW80R280P7XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 800V 17A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 3.5V @ 360µA Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 252 шт: термін постачання 21-31 дні (днів) |
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IPW80R280P7XKSA1 | INFINEON |
Description: INFINEON - IPW80R280P7XKSA1 - Leistungs-MOSFET, n-Kanal, 800 V, 17 A, 0.24 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 101W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.24ohm |
на замовлення 64 шт: термін постачання 21-31 дні (днів) |
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| IPW80R280P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 800V 17A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 291.00 грн |
| 30+ | 130.31 грн |
| 120+ | 122.89 грн |
| IPW80R280P7XKSA1 |
|
Виробник: INFINEON
Description: INFINEON - IPW80R280P7XKSA1 - Leistungs-MOSFET, n-Kanal, 800 V, 17 A, 0.24 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 101W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS P7
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.24ohm
Description: INFINEON - IPW80R280P7XKSA1 - Leistungs-MOSFET, n-Kanal, 800 V, 17 A, 0.24 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 101W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS P7
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.24ohm
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 305.89 грн |
| 10+ | 173.50 грн |