Технічний опис IPW90R120C3XKSA1 Infineon Technologies
Description: MOSFET N-CH 900V 36A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 2.9mA, Supplier Device Package: PG-TO247-3-21, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V.
Інші пропозиції IPW90R120C3XKSA1 за ціною від 757.26 грн до 1374.94 грн
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IPW90R120C3XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 900V 36A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.9mA Supplier Device Package: PG-TO247-3-21 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
на замовлення 276 шт: термін постачання 21-31 дні (днів) |
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| IPW90R120C3XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Supplier Device Package: PG-TO247-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Supplier Device Package: PG-TO247-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
на замовлення 276 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1374.94 грн |
| 30+ | 827.01 грн |
| 120+ | 757.26 грн |