| Кількість | Ціна |
|---|---|
| 1+ | 866.70 грн |
| 10+ | 850.27 грн |
| 25+ | 427.83 грн |
| 100+ | 394.00 грн |
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Технічний опис IPW95R060PFD7XKSA1 Infineon Technologies
Description: MOSFET N-CH 950V 74.7A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 74.7A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 57A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 2.85mA, Supplier Device Package: PG-TO247-3-41, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9378 pF @ 400 V.
Інші пропозиції IPW95R060PFD7XKSA1 за ціною від 602.91 грн до 1195.74 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPW95R060PFD7XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 950V 74.7A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74.7A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 57A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.85mA Supplier Device Package: PG-TO247-3-41 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9378 pF @ 400 V |
на замовлення 239 шт: термін постачання 21-31 дні (днів) |
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| IPW95R060PFD7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 74.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 57A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.85mA
Supplier Device Package: PG-TO247-3-41
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9378 pF @ 400 V
Description: MOSFET N-CH 950V 74.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 57A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.85mA
Supplier Device Package: PG-TO247-3-41
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9378 pF @ 400 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1195.74 грн |
| 30+ | 701.46 грн |
| 120+ | 602.91 грн |