| Кількість | Ціна |
|---|---|
| 4+ | 89.63 грн |
| 10+ | 55.77 грн |
| 100+ | 32.00 грн |
| 500+ | 24.88 грн |
| 1000+ | 20.86 грн |
| 5000+ | 18.04 грн |
| 10000+ | 17.69 грн |
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Технічний опис IPZ40N04S55R4ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 17µA, Supplier Device Package: PG-TSDSON-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPZ40N04S55R4ATMA1 за ціною від 24.12 грн до 98.32 грн
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IPZ40N04S55R4ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 40V 40A 8TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 17µA Supplier Device Package: PG-TSDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4974 шт: термін постачання 21-31 дні (днів) |
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| IPZ40N04S55R4ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.32 грн |
| 10+ | 59.63 грн |
| 100+ | 39.48 грн |
| 500+ | 28.93 грн |
| 1000+ | 26.31 грн |
| 2000+ | 24.12 грн |