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Технічний опис IPZ60R040C7XKSA1 Infineon Technologies
Description: INFINEON - IPZ60R040C7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 50 A, 0.034 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 50A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.5V, euEccn: NLR, Verlustleistung: 227W, Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: CoolMOS C7, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.034ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції IPZ60R040C7XKSA1 за ціною від 421.49 грн до 1158.47 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPZ60R040C7XKSA1 | INFINEON |
Description: INFINEON - IPZ60R040C7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 50 A, 0.034 ohm, TO-247, DurchsteckmontagetariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 227W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: CoolMOS C7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.034ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 118 шт: термін постачання 21-31 дні (днів) |
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IPZ60R040C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 227W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: CoolMOS™ C7 |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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IPZ60R040C7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 50A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.24mA Supplier Device Package: PG-TO247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V |
на замовлення 698 шт: термін постачання 21-31 дні (днів) |
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| IPZ60R040C7XKSA1 |
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Виробник: INFINEON
Description: INFINEON - IPZ60R040C7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 50 A, 0.034 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 227W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: CoolMOS C7
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.034ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IPZ60R040C7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 50 A, 0.034 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 227W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: CoolMOS C7
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.034ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 869.99 грн |
| 5+ | 695.66 грн |
| 10+ | 521.34 грн |
| 50+ | 470.35 грн |
| 100+ | 421.49 грн |
| IPZ60R040C7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1059.85 грн |
| IPZ60R040C7XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Description: MOSFET N-CH 600V 50A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 698 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1158.47 грн |
| 10+ | 1025.23 грн |
| 100+ | 865.88 грн |
| 500+ | 722.86 грн |





