IPZ60R070P6FKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 53.5A TO247-4, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Package / Case: TO-247-4, Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO247-4, Vgs(th) (Max) @ Id: 4.5V @ 1.72mA, Power Dissipation (Max): 391W (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.