IPZ65R019C7XKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 75A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.92mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
Description: MOSFET N-CH 650V 75A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.92mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
на замовлення 729 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1461.29 грн |
30+ | 1166.66 грн |
120+ | 1093.75 грн |
510+ | 875.9 грн |
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Технічний опис IPZ65R019C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 75A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.92mA, Supplier Device Package: PG-TO247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V.
Інші пропозиції IPZ65R019C7XKSA1 за ціною від 1136.51 грн до 1855.37 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IPZ65R019C7XKSA1 | Виробник : Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IPZ65R019C7XKSA1 Код товару: 117276 |
Транзистори > Польові N-канальні |
товар відсутній
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IPZ65R019C7XKSA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
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IPZ65R019C7XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Polarisation: unipolar Technology: CoolMOS™ C7 Gate-source voltage: ±20V Kind of channel: enhanced Drain-source voltage: 650V Drain current: 75A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 446W кількість в упаковці: 1 шт |
товар відсутній |
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IPZ65R019C7XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Polarisation: unipolar Technology: CoolMOS™ C7 Gate-source voltage: ±20V Kind of channel: enhanced Drain-source voltage: 650V Drain current: 75A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 446W |
товар відсутній |