Технічний опис IPZ65R065C7XKSA1 Infineon Technologies
Description: INFINEON - IPZ65R065C7XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 33 A, 0.058 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 33A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3.5V, Verlustleistung: 171W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: CoolMOS C7, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.058ohm.
Інші пропозиції IPZ65R065C7XKSA1 за ціною від 312.11 грн до 684.15 грн
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IPZ65R065C7XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 33A TO247-4Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-4 Vgs(th) (Max) @ Id: 4V @ 850µA Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 145 шт: термін постачання 21-31 дні (днів) |
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IPZ65R065C7XKSA1 | INFINEON |
Description: INFINEON - IPZ65R065C7XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 33 A, 0.058 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 33A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 171W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: CoolMOS C7 productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.058ohm |
на замовлення 126 шт: термін постачання 21-31 дні (днів) |
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| IPZ65R065C7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 33A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 850µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: MOSFET N-CH 650V 33A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-4
Vgs(th) (Max) @ Id: 4V @ 850µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 654.17 грн |
| 30+ | 369.41 грн |
| 120+ | 312.11 грн |
| IPZ65R065C7XKSA1 |
|
Виробник: INFINEON
Description: INFINEON - IPZ65R065C7XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 33 A, 0.058 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 33A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 171W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: CoolMOS C7
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.058ohm
Description: INFINEON - IPZ65R065C7XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 33 A, 0.058 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 33A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 171W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: CoolMOS C7
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.058ohm
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 684.15 грн |
| 5+ | 561.63 грн |
| 10+ | 438.28 грн |
| 50+ | 381.78 грн |
| 100+ | 312.24 грн |