IPZA60R099P7XKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
| Кількість | Ціна |
|---|---|
| 1+ | 363.95 грн |
| 30+ | 158.34 грн |
| 120+ | 153.32 грн |
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Технічний опис IPZA60R099P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V, Power Dissipation (Max): 117W (Tc), Vgs(th) (Max) @ Id: 4V @ 530µA, Supplier Device Package: PG-TO247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V.
Інші пропозиції IPZA60R099P7XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IPZA60R099P7XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IPZA60R099P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 117W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. |
| IPZA60R099P7XKSA1 |
|
Виробник: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
товару немає в наявності
В кошику
од. на суму грн.
| IPZA60R099P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.