Технічний опис IPZA65R018CFD7XKSA1 Infineon Technologies
Description: HIGH POWER_NEW, Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO247-4-3, Vgs(th) (Max) @ Id: 4.5V @ 2.91mA, Power Dissipation (Max): 446W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Інші пропозиції IPZA65R018CFD7XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IPZA65R018CFD7XKSA1 | Infineon Technologies |
 Description: HIGH POWER_NEWInput Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO247-4-3 Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IPZA65R018CFD7XKSA1 |
|
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.