на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 396.21 грн |
| 10+ | 297.09 грн |
| 25+ | 230.04 грн |
| 100+ | 201.01 грн |
| 250+ | 185.04 грн |
| 500+ | 174.16 грн |
| 1000+ | 161.82 грн |
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Технічний опис IQD020N10NM5CGSCATMA1 Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150, Packaging: Tape & Reel (TR), Package / Case: 9-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc), Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 159µA, Supplier Device Package: PG-WHTFN-9-U02, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V.
Інші пропозиції IQD020N10NM5CGSCATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IQD020N10NM5CGSCATMA1 | Виробник : Infineon Technologies |
 Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V |
товару немає в наявності |
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IQD020N10NM5CGSCATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150 Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V |
товару немає в наявності |