IQDH35N03LM5CGATMA1 Infineon Technologies

Description: OPTIMOS 6 POWER-TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: 9-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc), Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 278W (Tc), Vgs(th) (Max) @ Id: 2V @ 1.46mA, Supplier Device Package: PG-TTFN-9-U02, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V.