IQDH45N04LM6CGATMA1 Infineon Technologies

Description: OPTIMOS 6 POWER-TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: 9-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc), Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 1.449mA, Supplier Device Package: PG-TTFN-9-U02, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V.