на замовлення 4420 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 234.27 грн |
| 10+ | 197.25 грн |
| 25+ | 170.13 грн |
| 100+ | 156.88 грн |
| 250+ | 147.12 грн |
| 500+ | 130.38 грн |
| 1000+ | 121.32 грн |
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Технічний опис IQDH45N04LM6SCATMA1 Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc), Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 1.449mA, Supplier Device Package: PG-WHSON-8-U02, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V.
Інші пропозиції IQDH45N04LM6SCATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IQDH45N04LM6SCATMA1 | Виробник : Infineon Technologies |
 Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc) Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1.449mA Supplier Device Package: PG-WHSON-8-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
товару немає в наявності |
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IQDH45N04LM6SCATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc) Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1.449mA Supplier Device Package: PG-WHSON-8-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
товару немає в наявності |