| Кількість | Ціна |
|---|---|
| 2+ | 277.11 грн |
| 10+ | 238.30 грн |
| 25+ | 205.10 грн |
| 100+ | 183.96 грн |
| 250+ | 179.73 грн |
| 500+ | 160.70 грн |
| 1000+ | 145.19 грн |
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Технічний опис IQDH88N06LM5CGSCATMA1 Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150, Packaging: Tape & Reel (TR), Package / Case: 9-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc), Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 163µA, Supplier Device Package: PG-WHTFN-9-U02, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V.
Інші пропозиції IQDH88N06LM5CGSCATMA1 за ціною від 151.30 грн до 363.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IQDH88N06LM5CGSCATMA1 | Infineon Technologies |
 Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc) Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 163µA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V |
на замовлення 4200 шт: термін постачання 21-31 дні (днів) |
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| IQDH88N06LM5CGSCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 363.16 грн |
| 10+ | 233.12 грн |
| 100+ | 166.93 грн |
| 500+ | 151.30 грн |