IQE006NE2LM5SCATMA1 Infineon Technologies

Description: OPTIMOS LOWVOLTAGE POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc), Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-WHSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V.