IQE006NE2LM5SCATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 5946 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 176.48 грн |
10+ | 141.25 грн |
100+ | 112.42 грн |
500+ | 89.27 грн |
1000+ | 75.75 грн |
2000+ | 71.96 грн |
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Технічний опис IQE006NE2LM5SCATMA1 Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc), Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-WHSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V.
Інші пропозиції IQE006NE2LM5SCATMA1 за ціною від 74.64 грн до 193.42 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IQE006NE2LM5SCATMA1 | Виробник : Infineon Technologies | MOSFET TRENCH <= 40V |
на замовлення 4839 шт: термін постачання 21-30 дні (днів) |
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IQE006NE2LM5SCATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-WHSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
товар відсутній |