IQE022N06LM5SCATMA1 Infineon Technologies

Description: OPTIMOS 5 POWER-TRANSISTOR 60V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 48µA, Supplier Device Package: PG-WHSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V.