| Кількість | Ціна |
|---|---|
| 2+ | 263.13 грн |
| 10+ | 170.22 грн |
| 100+ | 103.61 грн |
| 500+ | 95.15 грн |
| 1000+ | 93.04 грн |
| 2500+ | 91.63 грн |
| 6000+ | 85.28 грн |
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Технічний опис IQE030N06NM5SCATMA1 Infineon Technologies
Description: INFINEON - IQE030N06NM5SCATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 132 A, 2200 µohm, SON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 132A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Gate-Source-Schwellenspannung, max.: 3.3V, Verlustleistung: 100W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SON, Anzahl der Pins: 8Pin(s), Produktpalette: OptiMOS 5 Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 2200µohm.
Інші пропозиції IQE030N06NM5SCATMA1 за ціною від 85.28 грн до 316.38 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IQE030N06NM5SCATMA1 | INFINEON |
 Description: INFINEON - IQE030N06NM5SCATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 132 A, 2200 µohm, SON, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V Dauer-Drainstrom Id: 132A hazardous: false Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: SON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 2200µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 5664 шт: термін постачання 21-31 дні (днів) |
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IQE030N06NM5SCATMA1 | INFINEON |
Description: INFINEON - IQE030N06NM5SCATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 132 A, 2200 µohm, SON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 132A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 3.3V Verlustleistung: 100W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2200µohm |
на замовлення 5664 шт: термін постачання 21-31 дні (днів) |
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IQE030N06NM5SCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-WHSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V |
на замовлення 165 шт: термін постачання 21-31 дні (днів) |
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Виробник: INFINEON
Description: INFINEON - IQE030N06NM5SCATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 132 A, 2200 µohm, SON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
Dauer-Drainstrom Id: 132A
hazardous: false
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2200µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IQE030N06NM5SCATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 132 A, 2200 µohm, SON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
Dauer-Drainstrom Id: 132A
hazardous: false
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2200µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 5664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 264.78 грн |
| 10+ | 173.50 грн |
| 100+ | 121.70 грн |
| 500+ | 95.45 грн |
| 1000+ | 85.99 грн |
| IQE030N06NM5SCATMA1 |
|
Виробник: INFINEON
Description: INFINEON - IQE030N06NM5SCATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 132 A, 2200 µohm, SON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 132A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 3.3V
Verlustleistung: 100W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
Description: INFINEON - IQE030N06NM5SCATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 132 A, 2200 µohm, SON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 132A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 3.3V
Verlustleistung: 100W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
на замовлення 5664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 278.76 грн |
| 10+ | 181.73 грн |
| 100+ | 129.10 грн |
| 500+ | 98.50 грн |
| 1000+ | 85.28 грн |
| IQE030N06NM5SCATMA1 |
|
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 316.38 грн |
| 10+ | 199.37 грн |
| 100+ | 139.53 грн |