на замовлення 5180 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 211.14 грн |
| 10+ | 175.46 грн |
| 25+ | 143.99 грн |
| 100+ | 123.52 грн |
| 250+ | 116.91 грн |
| 500+ | 109.64 грн |
| 1000+ | 93.79 грн |
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Технічний опис IQE050N08NM5SCATMA1 Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 49µA, Supplier Device Package: PG-WHSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V.
Інші пропозиції IQE050N08NM5SCATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IQE050N08NM5SCATMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 80V 16A |
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IQE050N08NM5SCATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-WHSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
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IQE050N08NM5SCATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-WHSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
товар відсутній |