IQE065N10NM5CGSCATMA1 Infineon Technologies

Description: OPTIMOS LOWVOLTAGE POWER MOSFET, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-WHTFN-9-1, Vgs(th) (Max) @ Id: 3.8V @ 48µA, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).