на замовлення 4950 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 247.29 грн |
| 10+ | 159.56 грн |
| 100+ | 96.22 грн |
| 500+ | 80.88 грн |
| 1000+ | 78.09 грн |
| 2500+ | 76.70 грн |
| 6000+ | 74.60 грн |
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Технічний опис IQE220N15NM5SCATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 8WHSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 26A, 10V, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 46µA, Supplier Device Package: PG-WHSON-8-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V.
Інші пропозиції IQE220N15NM5SCATMA1 за ціною від 80.50 грн до 251.00 грн
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IQE220N15NM5SCATMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 150V 8WHSONPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 26A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 46µA Supplier Device Package: PG-WHSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V |
на замовлення 5948 шт: термін постачання 21-31 дні (днів) |
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IQE220N15NM5SCATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 150V 8WHSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 26A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 46µA Supplier Device Package: PG-WHSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V |
товару немає в наявності |