IQE220N15NM5SCATMA1 Infineon Technologies

Description: MOSFET N-CH 150V 8WHSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 26A, 10V, Vgs(th) (Max) @ Id: 4.6V @ 46µA, Supplier Device Package: PG-WHSON-8-1, FET Type: N-Channel, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V.