Технічний опис IR2151SPBF International Rectifier
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Current - Peak Output (Source, Sink): 125mA, 250mA, Gate Type: IGBT, MOSFET (N-Channel), Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Synchronous, Rise / Fall Time (Typ): 80ns, 40ns, Supplier Device Package: 8-SOIC, High Side Voltage - Max (Bootstrap): 600 V, Input Type: RC Input Circuit, Voltage - Supply: 10V ~ 20V, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, DigiKey Programmable: Not Verified, Part Status: Obsolete.
Інші пропозиції IR2151SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IR2151SPBF | Infineon Technologies |
  Description: IC GATE DRVR HALF-BRIDGE 8SOICCurrent - Peak Output (Source, Sink): 125mA, 250mA Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 80ns, 40ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: RC Input Circuit Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube DigiKey Programmable: Not Verified Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
| IR2151SPBF |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Current - Peak Output (Source, Sink): 125mA, 250mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Current - Peak Output (Source, Sink): 125mA, 250mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.