IR25601SPBF Infineon Technologies
Виробник: Infineon TechnologiesDriver 600V 0.13A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SOIC N Tube
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Технічний опис IR25601SPBF Infineon Technologies
Description: HALF BRIDGE BASED PERIPHERAL DRI, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 200ns, 100ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.3V, Current - Peak Output (Source, Sink): 60mA, 130mA, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції IR25601SPBF
| Фото | Назва | Виробник | Інформація |
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IR25601SPBF | Виробник : International Rectifier |
Description: HALF BRIDGE BASED PERIPHERAL DRI Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 200ns, 100ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 60mA, 130mA Part Status: Active DigiKey Programmable: Not Verified |
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IR25601SPBF | Виробник : Infineon / IR |
Gate Drivers 2Ch 600V Half Bridge 60mA 10-20V 50ns |
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