| Кількість | Ціна |
|---|---|
| 1+ | 539.87 грн |
| 10+ | 316.22 грн |
| 100+ | 230.67 грн |
| 400+ | 207.46 грн |
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Технічний опис IRF100P218AKMA1 Infineon Technologies
Description: MOSFET N-CH 100V 209A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 209A (Tc), Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V, Power Dissipation (Max): 3.8W (Ta), 556W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 278µA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V.
Інші пропозиції IRF100P218AKMA1 за ціною від 214.83 грн до 566.47 грн
| Фото | Назва | Виробник | Інформація |
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IRF100P218AKMA1 | Infineon Technologies |
 Description: MOSFET N-CH 100V 209A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 556W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 278µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V |
на замовлення 969 шт: термін постачання 21-31 дні (днів) |
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| IRF100P218AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 209A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V
Description: MOSFET N-CH 100V 209A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V
на замовлення 969 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 566.47 грн |
| 25+ | 323.88 грн |
| 100+ | 271.12 грн |
| 500+ | 214.83 грн |