Технічний опис IRF100P219XKMA1 International Rectifier
Description: MOSFET N-CH 100V TO247AC, Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Obsolete, Supplier Device Package: TO-247AC, Vgs(th) (Max) @ Id: 3.8V @ 278µA, Power Dissipation (Max): 341W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 203A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IRF100P219XKMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRF100P219XKMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V TO247ACInput Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Obsolete Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 3.8V @ 278µA Power Dissipation (Max): 341W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 203A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. |
|
IRF100P219XKMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF100P219XKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Power Dissipation (Max): 341W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 100V TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Power Dissipation (Max): 341W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| IRF100P219XKMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
товару немає в наявності
В кошику
од. на суму грн.




