IRF1312PBF

Виробник: International Rectifier
УСТАРЕВШИЙ. РЕКОМЕНД. IRF2807ZPBF Транзистори

Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 95A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 210W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 57A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube

Виробник: Infineon / IR
MOSFET 80V 1 N-CH HEXFET 10mOhms 93nC