Технічний опис IRF150P221XKMA1 Infineon Technologies
Description: MOSFET N-CH 150V 186A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 186A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V, Power Dissipation (Max): 341W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 264µA, Supplier Device Package: PG-TO247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V.
Інші пропозиції IRF150P221XKMA1
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IRF150P221XKMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 186A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V |
товару немає в наявності |
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IRF150P221XKMA1 | Виробник : Infineon Technologies |
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товару немає в наявності |