IRF200B211XKMA1 Infineon Technologies

Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3-904, Vgs(th) (Max) @ Id: 4.9V @ 50µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.