Технічний опис IRF200B211XKMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 50µA, Supplier Device Package: PG-TO220-3-904, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V.
Інші пропозиції IRF200B211XKMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRF200B211XKMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 200V 12A 3-Pin(3+Tab) TO-220AB Tube |
товару немає в наявності |
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| IRF200B211XKMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 50µA Supplier Device Package: PG-TO220-3-904 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
товару немає в наявності |
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| IRF200B211XKMA1 | Виробник : Infineon Technologies |
MOSFETs TRENCH >=100V |
товару немає в наявності |