| Кількість | Ціна |
|---|---|
| 1+ | 721.98 грн |
| 10+ | 634.66 грн |
| 25+ | 487.03 грн |
| 100+ | 442.63 грн |
| 250+ | 427.83 грн |
| 400+ | 351.00 грн |
| 2800+ | 337.61 грн |
Відгуки про товар
Написати відгук
Технічний опис IRF200P222 Infineon Technologies
Description: MOSFET N-CH 200V 182A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 182A (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 82A, 10V, Power Dissipation (Max): 556W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 50 V.
Інші пропозиції IRF200P222
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRF200P222 | Infineon Technologies |
 Description: MOSFET N-CH 200V 182A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 182A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 82A, 10V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF200P222 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 182A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 82A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 50 V
Description: MOSFET N-CH 200V 182A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 82A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.