IRF200P223 Infineon Technologies

Description: MOSFET N-CH 200V 100A TO247AC, Input Capacitance (Ciss) (Max) @ Vds: 5094 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247AC, Vgs(th) (Max) @ Id: 4V @ 270µA, Power Dissipation (Max): 313W (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.