IRF200S234 Infineon Technologies

Description: MOSFET N-CH 200V 90A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 6484 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 417W (Tc), Rds On (Max) @ Id, Vgs: 16.9mOhm @ 51A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).