IRF2903ZPBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 290.19 грн |
| 10+ | 187.49 грн |
| 100+ | 121.93 грн |
| 500+ | 109.39 грн |
| 1000+ | 91.97 грн |
| 2000+ | 89.18 грн |
| 5000+ | 87.09 грн |
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Технічний опис IRF2903ZPBF Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB, Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 290W (Tc).
Інші пропозиції IRF2903ZPBF
| Фото | Назва | Виробник | Інформація |
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IRF2903ZPBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 30V 75A TO220ABRds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 290W (Tc) |
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