IRF2907ZS-7PPBF

Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 160A D2PAK
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)

Виробник: Infineon / IR
MOSFET 75V 1 N-CH HEXFET 3.8mOhms 170nC