IRF3706PBF Infineon Technologies

Description: MOSFET N-CH 20V 77A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 88W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.