Технічний опис IRF3706SPBF IR
Description: MOSFET N-CH 20V 77A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V.
Інші пропозиції IRF3706SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRF3706SPBF | International Rectifier |
 N-кан. MOSFET 20V, 77A, 0.0085Ом, 88Вт, D2PAK (HEXFET) Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRF3706SPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 77A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF3706SPBF |
|
Виробник: International Rectifier
N-кан. MOSFET 20V, 77A, 0.0085Ом, 88Вт, D2PAK (HEXFET) Транзистори
N-кан. MOSFET 20V, 77A, 0.0085Ом, 88Вт, D2PAK (HEXFET) Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRF3706SPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.