IRF3709ZLPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 87A TO262
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 79W (Tc)
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Технічний опис IRF3709ZLPBF Infineon Technologies
Description: MOSFET N-CH 30V 87A TO262, Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 2.25V @ 250µA, Power Dissipation (Max): 79W (Tc).
Інші пропозиції IRF3709ZLPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IRF3709ZLPBF | Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 6.3mOhms 17nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF3709ZLPBF |
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Виробник: Infineon Technologies
MOSFET 30V 1 N-CH HEXFET 6.3mOhms 17nC
MOSFET 30V 1 N-CH HEXFET 6.3mOhms 17nC
товару немає в наявності
В кошику
од. на суму грн.



