Технічний опис IRF3710STRRPBF Infineon / IR
Description: MOSFET N-CH 100V 57A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V.
Інші пропозиції IRF3710STRRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRF3710STRRPBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 100V 57A 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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IRF3710STRRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 100V 57A 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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| IRF3710STRRPBF | Виробник : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRF3710STRRPBF - IRF3710 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
товару немає в наявності |
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IRF3710STRRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel кількість в упаковці: 800 шт |
товару немає в наявності |
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IRF3710STRRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 57A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V |
товару немає в наявності |
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IRF3710STRRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
товару немає в наявності |