IRF3711SPBF

IRF3711SPBF Infineon Technologies


irf3711pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 20V 110A 3-Pin(2+Tab) D2PAK
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Технічний опис IRF3711SPBF Infineon Technologies

Description: MOSFET N-CH 20V 110A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Power Dissipation (Max): 3.1W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V.

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IRF3711SPBF IRF3711SPBF Виробник : Infineon Technologies irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954 Description: MOSFET N-CH 20V 110A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
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IRF3711SPBF IRF3711SPBF Виробник : Infineon / IR international rectifier_irf3711pbf-1168995.pdf MOSFET 20V 1 N-CH HEXFET 6mOhms 29nC
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