IRF3717TR Infineon Technologies

Description: MOSFET N-CH 20V 20A 8SO, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.45V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width).