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Технічний опис IRF433 HARRIS
Description: N-CHANNEL POWER MOSFET, Current - Continuous Drain (Id) @ 25°C: 4A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-204AA, Packaging: Bulk, Drain to Source Voltage (Vdss): 450 V, Part Status: Active, Supplier Device Package: TO-3, Power Dissipation (Max): 75W.
Інші пропозиції IRF433
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IRF433 | Harris Corporation |
 Description: N-CHANNEL POWER MOSFETCurrent - Continuous Drain (Id) @ 25°C: 4A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-204AA Packaging: Bulk Drain to Source Voltage (Vdss): 450 V Part Status: Active Supplier Device Package: TO-3 Power Dissipation (Max): 75W |
товару немає в наявності |
В кошику од. на суму грн. | |
| IRF433 | International Rectifier |
Description: 4.0A, 450V, 2.0 OHM, N-CHANNEL P Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF433 |
|
Виробник: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 4A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-204AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 450 V
Part Status: Active
Supplier Device Package: TO-3
Power Dissipation (Max): 75W
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 4A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-204AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 450 V
Part Status: Active
Supplier Device Package: TO-3
Power Dissipation (Max): 75W
товару немає в наявності
В кошику
од. на суму грн.