IRF5802 Infineon Technologies

Description: MOSFET N-CH 150V 900MA MICRO6, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: Micro6™(TSOP-6), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±30V, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tube.