Технічний опис IRF5802TR IR - ASA only Supplier
Description: MOSFET N-CH 150V 0.9A 6-TSOP, Packaging: Cut Tape (CT), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: Micro6™(TSOP-6), Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V.
Інші пропозиції IRF5802TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRF5802TR | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 150V 0.9A 6-Pin TSOP T/R |
товар відсутній |
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IRF5802TR | Виробник : Infineon Technologies |
Description: MOSFET N-CH 150V 0.9A 6-TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: Micro6™(TSOP-6) Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V |
товар відсутній |