Технічний опис IRF5810TRPBF IR
Description: MOSFET 2P-CH 20V 2.9A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 960mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-TSOP.
Інші пропозиції IRF5810TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRF5810TRPBF | Виробник : Infineon Technologies |
 Trans MOSFET P-CH Si 20V 2.9A 6-Pin TSOP T/R |
товар відсутній |
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IRF5810TRPBF | Виробник : Infineon Technologies |
Description: MOSFET 2P-CH 20V 2.9A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-TSOP |
товар відсутній |
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IRF5810TRPBF | Виробник : Infineon / IR |
MOSFET MOSFT DUAL PCh -20V 2.9A |
товар відсутній |