IRF5851TR
Виробник:
на замовлення 1000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис IRF5851TR
Description: MOSFET N/P-CH 20V 2.7A 6TSOP, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.25V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A, Drain to Source Voltage (Vdss): 20V, Power - Max: 960mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції IRF5851TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRF5851TR | Infineon Technologies |
Description: MOSFET N/P-CH 20V 2.7A 6TSOP Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.25V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A Drain to Source Voltage (Vdss): 20V Power - Max: 960mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF5851TR |
|
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 2.7A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 960mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 20V 2.7A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 960mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.