Технічний опис IRF5852TRPBF International Rectifier
Description: MOSFET 2N-CH 20V 2.7A 6TSOP, Part Status: Obsolete, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.25V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Drain to Source Voltage (Vdss): 20V, Power - Max: 960mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції IRF5852TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRF5852TRPBF | Infineon Technologies |
 Description: MOSFET 2N-CH 20V 2.7A 6TSOPPart Status: Obsolete Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.25V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Current - Continuous Drain (Id) @ 25°C: 2.7A Drain to Source Voltage (Vdss): 20V Power - Max: 960mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRF5852TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 20V 2.7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF5852TRPBF | Infineon / IR |
MOSFET MOSFT DUAL NCh 20V 2.7A |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF5852TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 960mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 960mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IRF5852TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IRF5852TRPBF |
|
Виробник: Infineon / IR
MOSFET MOSFT DUAL NCh 20V 2.7A
MOSFET MOSFT DUAL NCh 20V 2.7A
товару немає в наявності
В кошику
од. на суму грн.