IRF6201PBF

IRF6201PBF Infineon Technologies


irf6201pbf.pdf?fileId=5546d462533600a4015355e4445919ce Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 27A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 27A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8555 pF @ 16 V
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Технічний опис IRF6201PBF Infineon Technologies

Description: MOSFET N-CH 20V 27A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), Rds On (Max) @ Id, Vgs: 2.45mOhm @ 27A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8555 pF @ 16 V.

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IRF6201PBF IRF6201PBF Виробник : Infineon / IR Infineon_IRF6201_DataSheet_v01_01_EN-1732532.pdf MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC
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